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PRISM Seminar Series

By Jayathi Murthy (editor)

Purdue University

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Abstract These lectures are part of a seminar series sponsored by the NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems (PRISM). They capture the latest cutting-edge research from experts in the field of MEMS research.
Contributor Michael McLennan
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Cite this work

Researchers should cite this work as follows:

  • Jayathi Murthy (2009), "PRISM Seminar Series," http://memshub.org/resources/11.

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In This Series

  1. The Challenges of Micro-System Product Development

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    08 Jun 2009 | Online Presentations | Contributor(s): James J. Allen

    This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.

  2. Nanotribology, Nanomechanics and Materials Characterization Studies

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    05 Jun 2009 | Online Presentations | Contributor(s): Bharat Bhushan

    At most solid‐solid interfaces of technological relevance, contact occurs at numerous asperities. A sharp atomic/friction force microscope (AFM/FFM) tip sliding on a surface simulates just one such contact. However, asperities come in all shapes and sizes which can be simulated using tips of …

  3. Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design

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    05 Jun 2009 | Online Presentations | Contributor(s): Michael S. Eldred

    Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive techniques for uncertainty quantification due to their abilities to produce functional representations of stochastic variability and to achieve exponential convergence rates in statistics of …

  4. Gas Damping of Microcantilevers at Low Ambient Pressures

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    05 Jun 2009 | Online Presentations | Contributor(s): Rahul Anil Bidkar

    This seminar will present a theoretical model for predicting the gas damping of long, rectangular silicon microcantilevers, which are oscillating in an unbounded gaseous medium with the ambient pressures varying over 5 orders of magnitude (1000 > Kn > 0.03). The work is the result of a …

  5. From density functional theory to defect level in silicon: Does the "band gap problem" matter?

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    05 Jun 2009 | Online Presentations | Contributor(s): Peter A. Schultz

    Modeling the electrical effects of radiation damage in semiconductor devices requires detailed description of the properties of point defects generated during and subsequent irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier …

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